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  rev.2.00 sep 07, 2005 page 1 of 5 2sj76, 2SJ77, 2sj78, 2sj79 silicon p channel mos fet rej03g0122-0200 (previous: ade-208-1179) rev.2.00 sep 07, 2005 description high frequency and low frequency power amplifier, high speed power switching complementary pair with 2sk213, 2sk214, 2sk215, 2sk216 features ? suitable for direct mounting ? high forward transfer admittance ? excellent frequency response ? enhancement-mode outline renesas package code: prss0004ac-a (package name: to-220ab) d g s 1. gate 2. source (flange) 3. drain 1 2 3
2sj76, 2SJ77, 2sj78, 2sj79 rev.2.00 sep 07, 2005 page 2 of 5 absolute maximum ratings (ta = 25 c) item symbol value unit 2sj76 ?140 2SJ77 ?160 2sj78 ?180 drain to source voltage 2sj79 v dsx ?200 v gate to source voltage v gss 15 v drain current i d ?500 ma body to drain diode reverse drain current i dr ?500 ma pch 1.75 w channel dissipation pch note 1 30 w channel temperature tch 150 c storage temperature tstg ?45 to +150 c note: 1. value at tc = 25 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions 2sj76 ?140 ? ? v 2SJ77 ?160 ? ? v 2sj78 ?180 ? ? v drain to source breakdown voltage 2sj79 v (br) dsx ?200 ? ? v v gs = 2 v, i d = ?1 ma gate to source breakdown voltage v (br) gss 15 ? ? v i g = 10 a, v ds = 0 gate to source cutoff voltage v gs (on) ?0.2 ? ?1.5 v i d = ?10 ma, v ds = ?10 v note 2 drain to source saturation voltage v ds (sat) ? ? ?2.0 v i d = ?10 ma, v gs = 0 note 2 forward transfer admittance |y fs | 20 35 ? ms i d = ?10 ma, v ds = ?20 v note 2 input capacitance ciss ? 120 ? pf reverse transfer capacitance crss ? 4.8 ? pf v ds = ?10 v, i d = ?10 ma, f = 1 mhz note: 2. pulse test
2sj76, 2SJ77, 2sj78, 2sj79 rev.2.00 sep 07, 2005 page 3 of 5 main characteristics channel dissipation pch (w) case temperature tc (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (ma) typical output characteristics gate to source voltage v gs (v) drain current i d (ma) typical transfer characteristics ?50 0 ?10 ?20 ?30 ?40 0 ?20 ?40 ?60 ?80 ?100 ?500 0 ?100 ?200 ?300 ?400 0 ?1?2?3?4?5 75c tc = 25c 25c tc = ?25c 60 0 20 40 050100 150 v ds = ?20 v ?1.0 ?0.9 ?0.8 ?0.7 ?0.6 ?0.5 ?0.4 ?0.3 ?0.2 v gs = ?0.1 v gate to source voltage v gs (v) drain current i d (ma) typical transfer characteristics ?100 0 ?20 ?40 ?60 ?80 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 tc = ?25c v ds = ?20 v drain to source voltage v ds (v) drain current i d (ma) typical output characteristics ?500 0 ?100 ?200 ?300 ?400 0 ?4 ?8 ?12 ?16 ?20 tc = 25c ?4.5 ?4.0 ?3.5 ?3.0 ?2.5 ?2.0 ?1.5 ?1.0 v gs = ?0.5 v 25c 75c forward transfer admittance |y fs | (ms) forward transfer admittance vs. drain current drain current i d (ma) 200 100 20 50 10 2 5 ?2 ?5 ?10 ?20 ?50 ?100 ?200 tc = 25c v ds = ?20 v
2sj76, 2SJ77, 2sj78, 2sj79 rev.2.00 sep 07, 2005 page 4 of 5 forward transfer admittance |y fs | (ms) forward transfer admittance vs. frequency frequency f (hz) 500 100 10 1 0.05 0.1 5 k10 k 100 k 1 m 10 m 50 m tc = 25c v ds = ?20 v i d = ?10 ma
2sj76, 2SJ77, 2sj78, 2sj79 rev.2.00 sep 07, 2005 page 5 of 5 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?0.1 3.6 +0.1 ?0.08 package name prss0004ac-a to-220ab / to-220abv mass[typ.] 1.8g sc-46 renesas code jeita package code unit: mm ordering information part name quantity shipping container 2sj76-e 500 pcs box (sack) 2SJ77-e 500 pcs box (sack) 2sj78-e 500 pcs box (sack) 2sj79-e 500 pcs box (sack) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> 2-796-3115, fax: <82> 2-796-2145 renesas technology malaysia sdn. bhd. unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .3.0


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